DocumentCode
2113871
Title
Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery
Author
Coyitangiye, Lyse-Aline ; Grisel, Richard
Author_Institution
LEMI, Univ. de Rouen, Mont Saint Aignan
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
4
Abstract
A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements
Keywords
semiconductor device models; semiconductor diodes; Advance-MS simulator; charge transport equations; diode modeling; diode reverse recovery; lumped-charge modeling; semiconductor device model; Analytical models; Circuit simulation; Differential algebraic equations; Electronic circuits; Physics; Poisson equations; Predictive models; Semiconductor device modeling; Semiconductor diodes; Voltage; Compact modeling; VHDL-AMS; lumped-charge; reverse-recovery;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location
Como
Print_ISBN
1-4244-0275-1
Type
conf
DOI
10.1109/ESIME.2006.1643952
Filename
1643952
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