Title :
Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery
Author :
Coyitangiye, Lyse-Aline ; Grisel, Richard
Author_Institution :
LEMI, Univ. de Rouen, Mont Saint Aignan
Abstract :
A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements
Keywords :
semiconductor device models; semiconductor diodes; Advance-MS simulator; charge transport equations; diode modeling; diode reverse recovery; lumped-charge modeling; semiconductor device model; Analytical models; Circuit simulation; Differential algebraic equations; Electronic circuits; Physics; Poisson equations; Predictive models; Semiconductor device modeling; Semiconductor diodes; Voltage; Compact modeling; VHDL-AMS; lumped-charge; reverse-recovery;
Conference_Titel :
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location :
Como
Print_ISBN :
1-4244-0275-1
DOI :
10.1109/ESIME.2006.1643952
