A high order temperature curvature compensated CMOS bandgap reference

Author

Peng, Zhenyu ; Lv, Changzhi ; She, Shuojie

Author_Institution

Reliability Phys. Lab., Beijing Univ. of Technol., Beijing, China

fYear

2012

fDate

21-23 April 2012

Firstpage

2254

Lastpage

2257

Abstract

This paper presents a second-order corrected bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (V_BE). This circuit can achieve temperature coefficient of 1.5ppm/°C for temperature from -40 to 120°C at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits.

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; low-power electronics; resistors; TSMC 0.35μm 2P3M CMOS process; base-emitter voltage; high order temperature curvature compensated CMOS bandgap reference; high precision analog circuit; high precision digital circuit; resistor high temperature coefficient; second-order corrected bandgap reference; size 0.35 mum; temperature -40 degC to 120 degC; voltage 5 V; CMOS integrated circuits; CMOS technology; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Bandgap reference; high-order temperature compensation; temperature coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on

Conference_Location

Yichang

Print_ISBN

978-1-4577-1414-6

Type

conf

DOI

10.1109/CECNet.2012.6201536

Filename

6201536