Title :
A high order temperature curvature compensated CMOS bandgap reference
Author :
Peng, Zhenyu ; Lv, Changzhi ; She, Shuojie
Author_Institution :
Reliability Phys. Lab., Beijing Univ. of Technol., Beijing, China
Abstract :
This paper presents a second-order corrected bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (VBE). This circuit can achieve temperature coefficient of 1.5ppm/°C for temperature from -40 to 120°C at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits.
Keywords :
CMOS analogue integrated circuits; CMOS digital integrated circuits; low-power electronics; resistors; TSMC 0.35μm 2P3M CMOS process; base-emitter voltage; high order temperature curvature compensated CMOS bandgap reference; high precision analog circuit; high precision digital circuit; resistor high temperature coefficient; second-order corrected bandgap reference; size 0.35 mum; temperature -40 degC to 120 degC; voltage 5 V; CMOS integrated circuits; CMOS technology; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Bandgap reference; high-order temperature compensation; temperature coefficient;
Conference_Titel :
Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on
Conference_Location :
Yichang
Print_ISBN :
978-1-4577-1414-6
DOI :
10.1109/CECNet.2012.6201536
