DocumentCode
2114386
Title
An Analysis of Beam Deflections in Poly-SiGe Cantilevers
Author
Gonzalez, Mario ; Van Barel, Gregory ; Witvrouw, Ann ; Vandevelde, Bart
Author_Institution
IMEC, Leuven
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
6
Abstract
A predictive model for the deflection and profile of poly-SiGe beams for different thicknesses and geometries was evaluated. This model combines experimental data and finite element analysis (FEA). The structure employed to derivate the stress gradient and to calibrate and test the FEA calculations is a cantilever beam with dimensions of 1 mm length, 100 mum width and 10 mum thickness. The stress gradient of the film is obtained by measuring the deflection of the cantilevers with different etch depths. The deflection of the beam was calculated initially using a 2D plane stress model. The influence of the clamping region on the deflection was studied by using a perfect clamped beam and compared with a beam clamped only at the bottom clamp interface. In the second case a "tilt" effect near the anchor was observed due to the average stress in the unreleased thin film. FEM has been successfully applied to calculate the deflection of SiGe cantilever beams. Extra information like the stress distribution after releasing, the effect of Poisson\´s ratio on the curvature of the beam and the effect of clamping on the deflection was investigated
Keywords
Ge-Si alloys; beams (structures); cantilevers; finite element analysis; stress analysis; thin films; 1 mm; 100 micron; 2D plane stress model; FEA; Poisson ratio; SiGe; beam deflection; cantilever beam; clamped beam; clamping region; finite element analysis; poly-SiGe; stress gradient; stress profile; tilt effect; Clamps; Etching; Finite element methods; Geometry; Predictive models; Silicon germanium; Stress measurement; Structural beams; Testing; Transistors; Cantilevers; Finite Element Modeling; Poly-SiGe; Stress gradient; Stress profile;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location
Como
Print_ISBN
1-4244-0275-1
Type
conf
DOI
10.1109/ESIME.2006.1643974
Filename
1643974
Link To Document