DocumentCode :
2114526
Title :
Compound semiconductor electro-optic modulators for microwave photonics applications
Author :
Dagli, Nadir
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
fYear :
2013
fDate :
8-12 Sept. 2013
Firstpage :
195
Lastpage :
196
Abstract :
Compound semiconductor electro-optic modulators based on substrate-removal are described. Modulators with metal and buried electrodes in bulk GaAs have Vπ of 5 V and 0.3 V respectively. For both types bandwidths exceeding 35 GHz were also demonstrated.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; microwave photonics; GaAs; bulk GaAs; buried electrode; compound semiconductor electro-optic modulators; metal electrode; microwave photonics applications; substrate removal; voltage 0.3 V; voltage 5 V; Electrodes; Electrooptic modulators; Optical device fabrication; Optical waveguides; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
Type :
conf
DOI :
10.1109/IPCon.2013.6656501
Filename :
6656501
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2114526
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