A Monte Carlo Investigation of Nanocrystal Memory Reliability

Author

Gusmeroli, R. ; Spinelli, A.S. ; Compagnoni, C. Monzio ; Ielmini, D. ; Lacaita, A.L.

Author_Institution

Dipt. di Elettronica e Informazione, Politecnico di Milano

fYear

2006

fDate

24-26 April 2006

Firstpage

1

Lastpage

5

Abstract

Among the new memory concepts proposed in the last decade to replace the conventional flash cell, nanocrystal memories received large attentions because of their simple and CMOS compatible process flow. Using a 3-dimensional Monte Carlo simulator, we investigated the scaling perspectives of the nanocrystal memory technology due to reliability constraints. Results show that scaling this technology beyond the 45 nm node will drastically reduce the benefits deriving from distributed floating-gate effects and increase the program fail probability

Keywords

CMOS memory circuits; Monte Carlo methods; nanoelectronics; nanostructured materials; semiconductor device reliability; semiconductor storage; CMOS compatible; Monte Carlo investigation; memory concepts; nanocrystal memory reliability; CMOS process; CMOS technology; Failure analysis; Leakage current; Memory management; Monte Carlo methods; Nanocrystals; Nonvolatile memory; Numerical simulation; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on

Conference_Location

Como

Print_ISBN

1-4244-0275-1

Type

conf

DOI

10.1109/ESIME.2006.1643985

Filename

1643985