Title :
Performance Improvement of Ballistic Double-Gate Devices and Design Trade-Offs
Author :
Gusmeroli, R. ; Spinelli, A.S.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
Abstract :
We performed 2D quantum-mechanical simulations of double-gate devices with drift-diffusion and ballistic transport models, investigating the performance improvement that may derive from a scattering-free transport. Device performance and trade-offs are analyzed for channel length from 30 to 8 nm
Keywords :
ballistic transport; field effect devices; quantum theory; semiconductor device models; 2D quantum-mechanical simulations; 8 to 30 nm; ballistic transport models; design trade-offs; double-gate device; drift-diffusion; scattering-free transport; Ballistic transport; Computational modeling; Geometry; MOS devices; Particle scattering; Performance analysis; Poisson equations; Schrodinger equation; Semiconductor films; Silicon;
Conference_Titel :
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location :
Como
Print_ISBN :
1-4244-0275-1
DOI :
10.1109/ESIME.2006.1643986
