DocumentCode
2114701
Title
Impact of Source-Drain Tunneling on Double-Gate Performance
Author
Spinelli, A.S. ; Gusmeroli, R.
Author_Institution
Dipt. di Elettronica e Informazione, Politecnico di Milano
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
4
Abstract
We investigate the effects of source-drain tunneling on the performance of double-gate MOS devices with a 2D quantum-mechanical model. We show that a clear signature of the source-drain tunneling current is observable in the subthreshold behavior, affecting device performance even at room temperature. Dependences of the tunneling current on the main design variables are then analyzed in detail
Keywords
MIS devices; semiconductor device models; tunnelling; 2D quantum-mechanical model; design variables; double-gate MOS devices; double-gate performance; source-drain tunneling; subthreshold behavior; Doping; Geometry; Ionization; MOS devices; Poisson equations; Scalability; Schrodinger equation; Solid modeling; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location
Como
Print_ISBN
1-4244-0275-1
Type
conf
DOI
10.1109/ESIME.2006.1643988
Filename
1643988
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