Monte Carlo Analysis Of Hot Carrier Effects In Ultra Small Geometry MOSFETs
Author :
Fiegna, C. ; Iwai, H. ; Kimura, Tomohiro ; Nakamura, Shigenari ; Sangiorgi, E. ; Ricco, D.
Author_Institution :
Toshiba Corporation
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
102
Lastpage :
103
Keywords :
Computational modeling; Electrons; Geometry; Heating; Hot carrier effects; MOSFETs; Monte Carlo methods; Research and development; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
