Title :
Low temperature threshold current density effect by p-doping in InP/AlGaInP quantum dot laser diodes
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Dept. of Phys., King Abdulaziz Univ., Jeddah, Saudi Arabia
Abstract :
We demonstrate the effect of p-doping on threshold current density at low temperatures which shows distinctive behavior explained by spontaneous emission spectra taken at thresholds. Their full width half maximum accompanied with carrier distribution is higher in p-doped structure compare to undoped one.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; quantum dot lasers; semiconductor doping; spontaneous emission; InP-AlGaInP; carrier distribution; low temperature threshold current density effect; p-doping; quantum dot laser diodes; spontaneous emission spectra; Doping; Indium phosphide; Measurement by laser beam; Spontaneous emission; Temperature distribution; Temperature measurement; Threshold current;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656524
