• DocumentCode
    2115266
  • Title

    A Numerical Simulation Study Of SiGe/Si-heterostructured PMOS And Dipolar Devices

  • Author

    Kuo, J.B. ; Chen, B.Y. ; Chen, H.P. ; Lu, T.C. ; Sim, J.H.

  • Author_Institution
    National Taiwan University
  • fYear
    1993
  • fDate
    14-15 May 1993
  • Firstpage
    104
  • Lastpage
    105
  • Keywords
    Design optimization; Doping; Germanium silicon alloys; MOS devices; Microelectronics; Numerical simulation; Photonic band gap; Silicon germanium; Transconductance; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
  • Print_ISBN
    0-7803-1338-0
  • Type

    conf

  • DOI
    10.1109/VPAD.1993.724741
  • Filename
    724741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2115266