A new large-signal model for double barrier resonant tunneling diodes for frequency multiplier applications

Author

Neculoiu, Dan ; Tebeanu, Teodor ; Sztojanov, I.

Author_Institution

Univ. Politehnica, Bucharest, Romania

Volume

2

fYear

1997

fDate

7-11 Oct 1997

Firstpage

349

Abstract

The paper presents a new double barrier resonant tunneling diode large-signal model, suitable for the design of microwave frequency multiplier circuits. The model is based on the device I-V characteristic and the model parameters can be easily extracted from measured data. The model is used to design a frequency multiplier circuit and to estimate its conversion efficiency. The results are in good agreement with those, obtained using an optimization program based on harmonic balance technique

Keywords

frequency multipliers; microwave circuits; resonant tunnelling diodes; semiconductor device models; conversion efficiency; device I-V characteristic; double barrier resonant tunneling diodes; frequency multiplier applications; frequency multiplier circuit; harmonic balance technique; large-signal model; microwave frequency multiplier circuits; model parameters; optimization program; Circuit synthesis; Coupling circuits; Diodes; Equivalent circuits; Fourier series; Frequency domain analysis; Power generation; Resonance; Spline; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651177

Filename

651177