• DocumentCode
    2115936
  • Title

    Single atom calculation in silicon

  • Author

    Itoh, Kohei M.

  • Author_Institution
    Sch. of Fundamental Sci. & Technol., Keio Univ., Yokohama, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    Logic operations using single dopants in silicon are discussed. Among many shallow donors, substitutionally placed phosphorus donors have been playing the major roles in development of single-atom calculation in silicon. This presentation describes the current status and future outlook of electronics based on single atomic calculation in silicon.
  • Keywords
    elemental semiconductors; silicon; Si; electronics; logic operations; phosphorus donors; shallow donors; single atom calculation; single dopants; Coherence; Computers; Fabrication; Nanoscale devices; Quantum computing; Silicon; Wires; phoshorus donors; quantum calculation; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944823
  • Filename
    5944823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2115936