Title :
Comparison Between Simulated and Experimental Thermal Resistances of Power Devices Using an Specific Test Chip
Author :
Jordà, X. ; Vellvehi, M. ; Madrid, F. ; Gálvez, J.L. ; Godignon, P. ; Millán, J.
Author_Institution :
Centre Nacional de Microelectron., Cerdanyola del Valles
Abstract :
Thermal simulation is nowadays the basic thermal management design tool to predict temperature distributions and power fluxes of complex assemblies. Nevertheless, the simulation results can be inaccurate due to the uncertainty of the values of the parameters involved in the modelisation, as it is the case of the dielectric layer of the IMS substrates. We propose a methodology for the in-situ measurement of the thermal conductivity of this dielectric layer. Two typical power assembly structures based on two types of substrates and a thermal assessment chip, have been simulated and their thermal resistance deduced. The corresponding experimental results have validated the simulations and, consequently, the thermal conductivity extraction method proposed
Keywords :
dielectric materials; power semiconductor devices; temperature distribution; thermal conductivity measurement; thermal management (packaging); thermal resistance; IMS substrates; dielectric layer; power assembly structures; power devices; power fluxes; temperature distributions; thermal conductivity; thermal management design tool; thermal resistances; thermal simulation; Assembly; Conductivity measurement; Dielectric substrates; Energy management; Predictive models; Temperature distribution; Testing; Thermal conductivity; Thermal management; Thermal resistance;
Conference_Titel :
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location :
Como
Print_ISBN :
1-4244-0275-1
DOI :
10.1109/ESIME.2006.1644034