DocumentCode :
2116177
Title :
A surface-micromachined MEMS acoustic sensor with 0.8 µm CMOS impedance transducer
Author :
Lee, Jaewoo ; Je, C.H. ; Yang, W.S. ; Yang, Y.S. ; Kim, Jongdae
Author_Institution :
Electron. & Telecommun. Res. Inst., CCMRL, Daejeon, South Korea
fYear :
2010
fDate :
1-4 Nov. 2010
Firstpage :
1779
Lastpage :
1782
Abstract :
A surface-micromachined capacitive-type micro electro-mechanical system (MEMS) acoustic sensor with 0.8 μm CMOS impedance transducer is presented. This sensor chip is composed of a surface-micromachined MEMS microphone with X-shape bottom electrode anchors and a simple monolithic integrated impedance transducer based on 0.8 μm CMOS process (1 poly-2 metals), where Metal 2 in the CMOS process is also used as a bottom electrode for a sensor part. The total chip area is 0.8 mm × 0.9 mm. The Si MEMS acoustic sensor proposed in this paper has a diameter of 500 μm and a back chamber depth of 20 μm. It shows a zero-bias capacitance of 1.25 pF at 1 kHz and a pull down voltage of 33.4 V, and an open-circuit sensitivity of 0.53 mV/Pa on a bias of 9 V. In addition, the impedance transducer transfers a high output impedance to a low input impedance with a 9.5 dB gain at an input condition of 5 mV at 1 kHz.
Keywords :
CMOS image sensors; micromachining; microsensors; CMOS impedance transducer; CMOS process; X-shape bottom electrode anchors; capacitance 1.25 pF; frequency 1 kHz; gain 9.5 dB; size 20 mum; size 500 mum; surface-micromachined MEMS acoustic sensor; surface-micromachined MEMS microphone; voltage 33.4 V; voltage 5 mV;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
ISSN :
1930-0395
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2010.5689970
Filename :
5689970
Link To Document :
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