Performance improvement of metal-gate/high-k CMOS by NiPt-silicidation using laser annealing

Author

Yamamoto, Y. ; Yamaguchi, T. ; Kawasaki, Y. ; Kudo, S. ; Tsuchimoto, J. ; Sato, K. ; Nishida, Y. ; Yamashita, T. ; Oda, H. ; Inoue, Y.

Author_Institution

Production Technol. Unit, Renesas Electron. Corp., Hitachinaka, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

40

Lastpage

41

Abstract

NiPt-silicide formation using advanced annealing such as laser annealing (LA) or microwave annealing (MWA) is applied for gate-first metal gate/high-k CMOS. It is found that LA enhances NMOS drive current due to the reduction of parasitic resistance. It is found that LA produces characteristic Pt-distribution and reduces interfacial resistance between NiPtSi and Si especially for NMOS. On the other hand, MWA produces homogeneous NiPt-silicide and suppresses defect density related to contact leakage current.

Keywords

CMOS integrated circuits; electric resistance; electrical contacts; high-k dielectric thin films; laser beam annealing; leakage currents; nickel alloys; platinum alloys; silicon compounds; NMOS drive current; NiPtSi; advanced annealing; contact leakage current; defect density suppression; interfacial resistance; laser annealing; metal gate/high-k CMOS; microwave annealing; parasitic resistance reduction; silicidation; Annealing; High K dielectric materials; Logic gates; MOS devices; Masers; Metals; Resistance; Laser annealing; Microwave annealing; insert; silicide;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944834

Filename

5944834