Title :
Characterization Of Metallurgical Channel Length And Gate Electrode´s Physical Dimension For Device Analysis And Calibration Of Numerical Process And Device Simulators
Author_Institution :
Intel Corporation
Keywords :
Analytical models; CMOS technology; Calibration; Capacitance; Data mining; Doping; Impurities; MOS capacitors; MOSFETs; Performance analysis;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724745
