Title :
New statistical optimization method in fabricating 65nm MOSFET transistors using Monte Carlo and Dual Pearson models
Author :
Lin, Jia-Chun ; Chen, Chu-Yu ; Tsa, Meng-Hua
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
Abstract :
In this paper, a new statistical analysis method is presented to investigate the effect of nine factors in the 65nm MOSFET structure. The aim of this work is to clarify the electrical properties, correlation of the principal factors, based on exploratory factor analysis (EFA). From the simulation result, optimization parameters are determinative to achieve the objective.
Keywords :
MOSFET; Monte Carlo methods; optimisation; statistical analysis; EFA; MOSFET structure; MOSFET transistors; Monte Carlo models; dual Pearson models; exploratory factor analysis; size 65 nm; statistical analysis method; statistical optimization method; Doping; Guidelines; MOSFET circuits; Monte Carlo methods; Semiconductor process modeling; Simulation; Threshold voltage; EFA; MOSFET; SPSS; Silvaco TCAD; Threshold voltage;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944840
