Title :
Cross-current-tetrode (XCT) SOI MOSFET for future ultra-low power application
Author :
Ino, Daishi ; Omura, Yasuhisa
Author_Institution :
Grad. Sch. of Sci. Eng., Kansai Univ., Suita, Japan
Abstract :
This paper introduces a new scaling scheme for the XCT-SOI MOSFET and preliminary results. They confirm that the XCT-SOI MOSFET is a promising solution for future `ultra low-energy´ LSIs suitable for medical applications.
Keywords :
MOSFET; low-power electronics; silicon-on-insulator; tetrodes; cross-current-tetrode SOI MOSFET; ultra low power application; Biomedical equipment; CMOS integrated circuits; Logic gates; Medical services; Power MOSFET; Simulation; MOSFET; SOI; XCT; low energy; medical applications; scaling;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944841
