DocumentCode
2116526
Title
Control of crystalline orientation and diameter of Si nanowires based on VLS method and electrodeposition of catalyst using AAO template
Author
Wang, Q. ; Shimizu, T. ; Shingubara, S.
Author_Institution
Kansai Univ., Suita, Japan
fYear
2011
fDate
19-20 May 2011
Firstpage
60
Lastpage
61
Abstract
Control of epitaxial crystal growth orientation and diameter of Si nanowires were accomplished using anodic aluminum oxide (AAO) template formed on Si substrates. Vapor-Liquid-Solid (VLS) growth of Si nanowires was initiated on the size-controlled Au catalyst electrodeposited in AAO, and growth direction of nanowire was determined by choosing orientation of Si substrate.
Keywords
catalysts; electrodeposition; elemental semiconductors; nanofabrication; nanowires; semiconductor growth; silicon; AAO template; Si; VLS growth; anodic aluminum oxide template; catalyst electrodeposition; crystalline orientation control; epitaxial crystal growth orientation control; nanowires; vapor-liquid-solid growth; Epitaxial growth; Gold; Hafnium; Nanowires; Silicon; Substrates; AAO template; CVD facility; Si nanowires; VLS;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-61284-145-8
Electronic_ISBN
978-1-61284-147-2
Type
conf
DOI
10.1109/IMFEDK.2011.5944844
Filename
5944844
Link To Document