• DocumentCode
    2116550
  • Title

    Reconsideration of minority carrier diffusion in nanoscale wire Si pn junction

  • Author

    Fujita, Shinji ; Kotoug, Toshiya ; Omura, Yasuhisa

  • Author_Institution
    Fac. of Sci. & Eng., Kansai Univ., Suita, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    This paper examines the minority carrier diffusion and recombination process of nano-scale Si wire pn junction device with the aid of 3-D device simulations.
  • Keywords
    diffusion; elemental semiconductors; minority carriers; nanowires; silicon; 3D device simulations; minority carrier diffusion; nanoscale wire pn junction device; recombination process; Doping; Electric potential; Junctions; Mathematical model; Nanoscale devices; Quadrature amplitude modulation; Semiconductor process modeling; Si wire; diffusion; minority carriers; pn junction; quasi-atom;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944845
  • Filename
    5944845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2116550