Title :
Reconsideration of minority carrier diffusion in nanoscale wire Si pn junction
Author :
Fujita, Shinji ; Kotoug, Toshiya ; Omura, Yasuhisa
Author_Institution :
Fac. of Sci. & Eng., Kansai Univ., Suita, Japan
Abstract :
This paper examines the minority carrier diffusion and recombination process of nano-scale Si wire pn junction device with the aid of 3-D device simulations.
Keywords :
diffusion; elemental semiconductors; minority carriers; nanowires; silicon; 3D device simulations; minority carrier diffusion; nanoscale wire pn junction device; recombination process; Doping; Electric potential; Junctions; Mathematical model; Nanoscale devices; Quadrature amplitude modulation; Semiconductor process modeling; Si wire; diffusion; minority carriers; pn junction; quasi-atom;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944845
