DocumentCode
2116572
Title
A novel bootstrapped switch
Author
Hu, Rongbin ; Tang, Jie
Author_Institution
Sichuan Inst. of Solid State Circuits, Chongqing, China
fYear
2012
fDate
21-23 April 2012
Firstpage
1545
Lastpage
1547
Abstract
A novel bootstrapped switch is introduced in this paper. At first, the mathematics built in the bootstrapped switch is discussed Secondly, the prototype of the bootstrapped switch is described. At last, the transistor-level circuit of the bootstrapped switch is given. The performance of the bootstrapped switch is tested indirectly by stimulating a sampling and holding circuit containing the bootstrapped switch. The stimulated results show that the bootstrapped switch has a performance with SFDR more than 89dBc, and SNR bigger than 79dB.
Keywords
field effect transistor switches; sample and hold circuits; switched capacitor networks; NMOS; bootstrapped switch; sampling and holding circuit; switched capacitor circuit; transistor-level circuit; Capacitors; Logic gates; MOSFETs; Power supplies; Switches; Switching circuits; S/H circuit; bootstrapped circuit; charge pump;
fLanguage
English
Publisher
ieee
Conference_Titel
Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on
Conference_Location
Yichang
Print_ISBN
978-1-4577-1414-6
Type
conf
DOI
10.1109/CECNet.2012.6201615
Filename
6201615
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