• DocumentCode
    2116574
  • Title

    Nanotechnology in Silicon CMOS Fabrication and Nanoelectronics

  • Author

    Meyyappan, M.

  • Author_Institution
    Center for Nanotechnol., NASA Ames Res. Center, Moffett Field, CA
  • fYear
    2006
  • fDate
    24-26 April 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Summary form only given. While novel device structures using nanomaterials such as carbon nanotubes and organic molecules may be far away, there are opportunities to use nanomaterials in solving critical issues faced by silicon CMOS downscaling. Two examples, both using carbon nanotubes, in chip cooling and developing interconnects were discussed. Following this, prospects of fabricating vertical and planar transistors using nanowires of silicon and germanium were discussed
  • Keywords
    CMOS integrated circuits; carbon nanotubes; cooling; nanoelectronics; nanowires; CMOS fabrication; carbon nanotubes; chip cooling; nanoelectronics; nanomaterials; nanotechnology; nanowires; Carbon nanotubes; Cooling; Copper; Fabrication; Filling; Nanoelectronics; Nanomaterials; Nanotechnology; Probes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
  • Conference_Location
    Como
  • Print_ISBN
    1-4244-0275-1
  • Type

    conf

  • DOI
    10.1109/ESIME.2006.1644055
  • Filename
    1644055