DocumentCode
2116574
Title
Nanotechnology in Silicon CMOS Fabrication and Nanoelectronics
Author
Meyyappan, M.
Author_Institution
Center for Nanotechnol., NASA Ames Res. Center, Moffett Field, CA
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
Summary form only given. While novel device structures using nanomaterials such as carbon nanotubes and organic molecules may be far away, there are opportunities to use nanomaterials in solving critical issues faced by silicon CMOS downscaling. Two examples, both using carbon nanotubes, in chip cooling and developing interconnects were discussed. Following this, prospects of fabricating vertical and planar transistors using nanowires of silicon and germanium were discussed
Keywords
CMOS integrated circuits; carbon nanotubes; cooling; nanoelectronics; nanowires; CMOS fabrication; carbon nanotubes; chip cooling; nanoelectronics; nanomaterials; nanotechnology; nanowires; Carbon nanotubes; Cooling; Copper; Fabrication; Filling; Nanoelectronics; Nanomaterials; Nanotechnology; Probes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location
Como
Print_ISBN
1-4244-0275-1
Type
conf
DOI
10.1109/ESIME.2006.1644055
Filename
1644055
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