Title :
Formation of electroless barrier for all-wet process of TSV in 3D-LSI technology and evaluation of its adhesion property
Author :
Arima, Ryohei ; Inoue, Fumihiro ; Yokoyama, Takumi ; Miyake, Hiroshi ; Shimizu, Tomohiro ; Shingubara, Shoso ; Tanaka, Shukichi ; Terui, Toshifumi
Author_Institution :
Kansai Univ., Suita, Japan
Abstract :
The fabrication of thin barrier metal layer in a high aspect ratio TSV using electroless plating with Pd nanoparticles (NPs) as a catalyst was investigated. We succeeded in the formation of thin continuous electroless barrier metal layer for a high aspect ratio TSV with addition of adequate amount of additives. Adhesion strength of Co-W-B barrier metal increased with decreasing film thickness. The adhesion strength of barrier film increased with annealing at 200°C, and it was strong enough for practical application.
Keywords :
adhesion; boron; catalysts; cobalt; diffusion barriers; electroless deposition; large scale integration; nanofabrication; nanoparticles; palladium; thin films; three-dimensional integrated circuits; tungsten; 3D-LSI technology; Co-W-B; Pd; TSV all-wet process; adhesion property; catalyst; electroless plating; nanoparticle; temperature 200 degC; thick film; thin continuous electroless diffusion barrier metal layer formation; Adhesives; Annealing; Copper; Films; Internal stresses; Through-silicon vias; 3-D LSIs; Diffusion barrier metal; Eletroless plating; Pd nanoparticle; TSV;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944847