Drain current - gate voltage characteristics of Si MOSFETs fabricated on Si-on-SiC wafers

Author

Araki, Ryosuke ; Shimizu, Hideo ; Kurumi, Takamasa ; Kinoshita, Hiroyuki ; Yoshimoto, Masahiro

Author_Institution

Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

68

Lastpage

69

Abstract

We developed an engineered wafer, a Si-on-SiC wafer, in which a Si wafer is directly bonded to single-crystalline 6H-SiC. We demonstrated a remarkable improvement in heat dissipation performance and a 60% reduction in the self-heating effect of Si MOSFET fabricated on Si-on-SiC wafer. Although a leakage current via the bonded interface is a concern in the device operation for the directly bonded Si-on-SiC wafer, a distinct degradation of leakage current is not observed in range of Si thickness between 2 and 13 μm.

Keywords

MOSFET; cooling; elemental semiconductors; leakage currents; silicon; silicon compounds; wide band gap semiconductors; Si MOSFET; Si-on-SiC wafers; SiC:Si; drain current-gate voltage characteristics; engineered wafer; heat dissipation; leakage current; self-heating effect; single-crystalline 6H-SiC; Degradation; Heating; Leakage current; MOSFETs; Silicon; Silicon carbide; Thermal conductivity; MOSFETs; heat dissipation; silicon carbide; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944848

Filename

5944848