Drain current - gate voltage characteristics of Si MOSFETs fabricated on Si-on-SiC wafers

We developed an engineered wafer, a Si-on-SiC wafer, in which a Si wafer is directly bonded to single-crystalline 6H-SiC. We demonstrated a remarkable improvement in heat dissipation performance and a 60% reduction in the self-heating effect of Si MOSFET fabricated on Si-on-SiC wafer. Although a leakage current via the bonded interface is a concern in the device operation for the directly bonded Si-on-SiC wafer, a distinct degradation of leakage current is not observed in range of Si thickness between 2 and 13 μm.