High-quality single-crystal SiGe layers on insulator formed by rapid melt growth

Author

Ogiwara, S. ; Suzuki, Y. ; Yoshimoto, C. ; Hosoi, T. ; Shimura, T. ; Watanabe, H.

Author_Institution

Grad. Sch. of Eng., Osaka Univ., Suita, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

70

Lastpage

71

Abstract

We demonstrate the fabrication of high-quality fully relaxed SiGe layers on a silicon-on-insulator (SOI) substrate by rapid melt growth. A compositional gradient and crystallographic defects are confined to a region between the relaxed SiGe and residual SOI layers. The degradation of surface roughness during rapid thermal annealing is suppressed by the capping SiO₂ layer.

Keywords

Ge-Si alloys; crystal defects; crystal growth from melt; rapid thermal annealing; silicon compounds; silicon-on-insulator; stress relaxation; surface roughness; SiGe; SiO₂; compositional gradient; crystallographic defects; high quality single crystal; rapid melt growth; rapid thermal annealing; relaxed crystal; residual SOI layer; silicon-on-insulator substrate; surface roughness; Atomic layer deposition; Fabrication; Reflection; Silicon; Silicon germanium; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944849

Filename

5944849