DocumentCode :
2116693
Title :
High-speed, high-efficiency, and large-area p-i-n photodiode for operations from 850 to 1550 nm optical wavelengths
Author :
Jin-Wei Shi ; Ying-Hung Cheng ; Jhih-Min Wun ; Kai-Lun Chi ; Yue-Ming Hsin ; Benjamin, Seldon D.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fYear :
2013
fDate :
8-12 Sept. 2013
Firstpage :
356
Lastpage :
357
Abstract :
We demonstrate novel photodiodes with large active diameters (55 μm). Under -1 V bias, they achieve high-speed (14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 μm wavelength operation respectively.
Keywords :
p-i-n photodiodes; large active diameters; p-i-n photodiode; responsivity; size 55 mum; wavelength 850 nm to 1550 nm; Bandwidth; Frequency measurement; High-speed optical techniques; PIN photodiodes; Photonic band gap; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
Type :
conf
DOI :
10.1109/IPCon.2013.6656584
Filename :
6656584
Link To Document :
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