Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes

Author

Saito, T. ; Nitanda, K. ; Syahiman, A. ; Tokuda, H. ; Kuzuhara, M.

fYear

2011

fDate

19-20 May 2011

Firstpage

80

Lastpage

81

Abstract

n-GaN Schottky barrier diodes were fabricated on a sapphire substrate. Ni/Au and Ti/Al/Mo/Au were used for Schottky and ohmic contacts, respectively. A better fitted characteristic was obtained by calculation of thermionic-field emission. Similar comparison was made for current-voltage characteristics measured at high temperatures up to 523 K. With the increase in the device temperature, better fitting was obtained with a thermionic emission theory.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; gallium compounds; leakage currents; ohmic contacts; wide band gap semiconductors; Al₂O₃; GaN; Ni-Au; Schottky contacts; Ti-Al-Mo-Au; current-voltage characteristics; n-GaN Schottky barrier diodes; n-GaN Schottky diodes; ohmic contacts; sapphire substrate; temperature-dependent reverse leakage current characterization; thermionic emission theory; thermionic-field emission; Current measurement; Plasma temperature; Schottky barriers; Schottky diodes; Temperature; Temperature measurement; Voltage measurement; GaN; Schottky barrier diodes; thermionic-field emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944854

Filename

5944854