Transformer-isolated gate drive design for SiC JFET phase-leg module

Author

Wang, Ruxi ; Danilovic, Milisav ; Boroyevich, Dushan ; Chen, Zheng ; Kaushik, Rajashekara

Author_Institution

Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2011

fDate

17-22 Sept. 2011

Firstpage

1728

Lastpage

1733

Abstract

In order to take full advantage of the SiC devices´ high-temperature and high-frequency capabilities, a transformer isolated gate driver is designed for the SiC JFET phase leg module to achieve a fast switching speed of 26V/ns and a small cross-talking voltage of 4.2V in a 650V and 5A inductive load test. Transformer isolated gate drive circuits suitable for high-temperature applications are compared with respect to different criteria. Based on the comparison, an improved edge triggered gate drive topology is proposed. Then, using the proposed gate drive topology, special issues in the phase-leg gate drive design are discussed. Several strategies are implemented to improve the phase-leg gate drive performance and alleviate the cross-talking issue. Simulation and experimental results are given for verification purposes.

Keywords

driver circuits; junction gate field effect transistors; silicon compounds; transformers; wide band gap semiconductors; JFET phase leg module; SiC; current 5 A; fast switching speed; gate drive topology; inductive load test; transformer isolated gate drive; voltage 4.2 V; voltage 650 V; Capacitors; Frequency modulation; JFETs; Logic gates; Pulse transformers; Silicon carbide; Topology; High Temperature Application; Silicon Carbide; Transformer-Isolated Gate drive;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2011 IEEE

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4577-0542-7

Type

conf

DOI

10.1109/ECCE.2011.6063991

Filename

6063991