DocumentCode :
2116933
Title :
High voltage silicon integrated circuits
Author :
Cauge, T. ; Kocsis, J. ; Polata, B.
Author_Institution :
Signetics Corporation 811 E. Arques Avenue Sunnyvale, Cal. 94086
fYear :
1970
fDate :
20-21 April 1970
Firstpage :
60
Lastpage :
64
Abstract :
Up until recently integrated circuits have been synonomous with low voltage applications. The reasons for this are numerous but suffice it to say that the conventional planar IC technology is not conducive to high voltage performance in the individual circuit elements. This paper will describe two modifications of the technology which make high voltage I C s a reality. The restrictions on power dissipation still remain since the power handling capability of an IC as such is primarily determined by chip size and packaging. However, there are many applications for high voltage and low power, and by way of introducing the problems and solutions of such an application, the following simple but useful circuit will be used as a vehicle for discussion.
Keywords :
Dielectrics; Electric breakdown; Integrated circuits; Inverters; Junctions; Low voltage; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1970 IEEE
Conference_Location :
Greenlelt, Maryland, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PECS.1970.7066241
Filename :
7066241
Link To Document :
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