• DocumentCode
    2116936
  • Title

    Tailoring the electronic properties of vertically stacked quantum-dots by local potential modulation

  • Author

    Takahashi, Hiroki ; Minari, Hideki ; Mori, Nobuya

  • Author_Institution
    Grad. Sch. of Eng., Osaka Univ., Suita, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    We have theoretically investigated electronic properties of InAs/GaAs quantum-dot superlattices in which a potential well is inserted in the center of each InAs quantum dot. We find that the potential well pulls down exclusively the energy of the lowest miniband and provides an additional design parameter for solar cell application.
  • Keywords
    arsenic compounds; gallium compounds; indium compounds; quantum dots; solar cells; GaAs; InAs; electronic properties; local potential modulation; quantum-dot superlattices; solar cell; vertically stacked quantum-dots; Electric potential; Energy states; Gallium arsenide; Photovoltaic cells; Potential well; Quantum dots; Superlattices; GaAs; InAs; Intermediate-band solar cell; Quantum dot; Solar cell; Superlattice;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944862
  • Filename
    5944862
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2116936