DocumentCode
2117083
Title
Fabrication of PbTiO3 and Pt self-organized nanocrystal array structure on atomically flat sapphire
Author
Nishida, Takashi ; Asahi, Kenshiro ; Miura, Yuta ; Lu, Li ; Echizen, Masahiro ; Yoneda, Yasuhiro ; Kimura, Hideo ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
fYear
2011
fDate
19-20 May 2011
Firstpage
106
Lastpage
107
Abstract
The fabrication of ferroelectric nanocrystal materials such as Pb(Zr,Ti)O3 has been widely researched because of the development of high capacity ferroelectric random access memory devices (FeRAM) and ferroelectric domain physics at the nano scale. The ultra flat surface of electrically conductive materials such as Pt is required for the deposition of the ferroelectric nanocrystal substrate. In this paper, Pt deposition was performed using our newly developed sputtering method (low angle incidence sputtering) on an atomically flat sapphire substrate. Due to Volmer-Waber growth, the sputtered Pt grew into island crystals at the normal deposition rate. However, lateral growth of Pt occurred at a very low rate, and the ultra thin atomically flat Pt layer could be obtained on the atomically flat sapphire surface. The Pt thin layer was also evaluated using electrically conductive atomic force microscope (C-AFM) measurement, confirming electric conduction of the atomically flat Pt layer. The obtained atomically flat Pt layer is expected to be utilized for electrical evaluation of PbTiO3 nanocrystal array.
Keywords
atomic force microscopy; electrical conductivity; ferroelectric storage; ferroelectric thin films; island structure; nanofabrication; nanostructured materials; random-access storage; sputter deposition; Al2O3; C-AFM measurement; FeRAM; PbTiO3; Pt; Volmer-Waber growth; atomically flat sapphire substrate; electrically conductive atomic force microscope; electrically conductive material; ferroelectric domain physics; ferroelectric nanocrystal material fabrication; high capacity ferroelectric random access memory device; island crystals; platinum deposition; self-organized nanocrystal array structure fabrication; sputtering method; ultra thin atomically flat platinum layer; Atomic layer deposition; Films; Nanocrystals; Sputtering; Substrates; Surface morphology; Surface treatment; FeRAM; Nanocrystal; PZT; PbTiO3 ;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-61284-145-8
Electronic_ISBN
978-1-61284-147-2
Type
conf
DOI
10.1109/IMFEDK.2011.5944867
Filename
5944867
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