• DocumentCode
    2117120
  • Title

    Comparison Between A Posteriori Error Indicators For Adaptive Mesh Generation In Semiconductor Device Simulation

  • Author

    Tanaka, K. ; Ciampohni, P. ; Pierantoni, A. ; Baccarani, G.

  • Author_Institution
    NEC Corporation
  • fYear
    1993
  • fDate
    14-15 May 1993
  • Firstpage
    118
  • Lastpage
    119
  • Keywords
    Charge carrier density; Current density; MOSFETs; Mesh generation; Microelectronics; National electric code; Piecewise linear approximation; Poisson equations; Semiconductor devices; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
  • Print_ISBN
    0-7803-1338-0
  • Type

    conf

  • DOI
    10.1109/VPAD.1993.724748
  • Filename
    724748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2117120