DocumentCode :
2117185
Title :
Increase in resistivity of indium-tin-oxide films spin-coated on titanium-dioxides
Author :
Tagawa, Toshinari ; Fujimoto, Takashi ; Nakamura, Kazuhiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan
fYear :
2011
fDate :
19-20 May 2011
Firstpage :
112
Lastpage :
113
Abstract :
ITO and TiO2 films were prepared on silicon substrate using spin-coating method. Three types of samples were prepared for comparison. They were ITO/TiO2(78nm-thick)/Si, ITO/TiO2(25nm-thick)/Si and ITO/Si. The resistivity of an ITO film prepared on TiO2 was larger than that on Si. Furthermore, the resistivity became larger with increasing the thickness of the underlying TiO2 layer.
Keywords :
electrical resistivity; indium compounds; silicon; spin coating; tin compounds; ITO-Si; ITO-TiO2; silicon substrate; size 25 nm; size 78 nm; spin coating method; thin film resistivity; Annealing; Conductivity; Films; Indium tin oxide; Silicon; Substrates; Tin; Indium-Tin-Oxide (ITO); Resistivity; Spin-Coating; Titanium-Dioxide (TiO2);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
Type :
conf
DOI :
10.1109/IMFEDK.2011.5944870
Filename :
5944870
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2117185
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