• DocumentCode
    2117211
  • Title

    Nanowatt-power-level automatic-switch circuit combining CMOS and photodiode

  • Author

    Utsunomiya, Fumiyasu ; Douseki, Takakuni

  • Author_Institution
    Coll. of Sci. & Eng., Ritsumeikan Univ., Kusatsu, Japan
  • fYear
    2010
  • fDate
    1-4 Nov. 2010
  • Firstpage
    1918
  • Lastpage
    1921
  • Abstract
    A nanowatt-power-level automatic-switch circuit that combines an ultralow-power CMOS level converter and a photodiode has been developed as a sensor application. The level converter is a single-input latch-type circuit featuring the use of a depletion-type common-gate MOSFET as a driver transistor, no DC current path, and nanowatt-order power dissipation. To verify the effectiveness of the circuit, a prototype level converter was fabricated on a 0.6-μm CMOS process and used in an automatic-switch circuit in a wireless mouse. The switch circuit is composed of two photodiodes, a current-mirror circuit, the level converter, and a power switch MOSFET. It senses when a hand grabs or releases the mouse and automatically turns the mouse on or off, respectively. The measured power dissipation of the mouse is 3 nW in the standby mode.
  • Keywords
    CMOS integrated circuits; driver circuits; flip-flops; photodiodes; power MOSFET; switched current circuits; automatic switch circuit; common gate MOSFET; current mirror circuit; driver transistor; latch type circuit; nanowatt power level; photodiode; power 3 mW; power switch MOSFET; size 0.6 mum; ultralow-power CMOS level converter; wireless mouse;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2010 IEEE
  • Conference_Location
    Kona, HI
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-8170-5
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2010.5690009
  • Filename
    5690009