Title :
Nanowatt-power-level automatic-switch circuit combining CMOS and photodiode
Author :
Utsunomiya, Fumiyasu ; Douseki, Takakuni
Author_Institution :
Coll. of Sci. & Eng., Ritsumeikan Univ., Kusatsu, Japan
Abstract :
A nanowatt-power-level automatic-switch circuit that combines an ultralow-power CMOS level converter and a photodiode has been developed as a sensor application. The level converter is a single-input latch-type circuit featuring the use of a depletion-type common-gate MOSFET as a driver transistor, no DC current path, and nanowatt-order power dissipation. To verify the effectiveness of the circuit, a prototype level converter was fabricated on a 0.6-μm CMOS process and used in an automatic-switch circuit in a wireless mouse. The switch circuit is composed of two photodiodes, a current-mirror circuit, the level converter, and a power switch MOSFET. It senses when a hand grabs or releases the mouse and automatically turns the mouse on or off, respectively. The measured power dissipation of the mouse is 3 nW in the standby mode.
Keywords :
CMOS integrated circuits; driver circuits; flip-flops; photodiodes; power MOSFET; switched current circuits; automatic switch circuit; common gate MOSFET; current mirror circuit; driver transistor; latch type circuit; nanowatt power level; photodiode; power 3 mW; power switch MOSFET; size 0.6 mum; ultralow-power CMOS level converter; wireless mouse;
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2010.5690009