Title :
Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles
Author :
Bundo, Kosuke ; Imazawa, Takanori ; Uenuma, Mutsunori ; Ishikawa, Yasuaki ; Watanabe, Heiji ; Yamashita, Ichiro ; Uraoka, Yukiharu
Author_Institution :
Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
We have demonstrated low-temperature crystal growth process using Ni ferritins. The grain with the size of 500 nm was obtained when the ferritin concentration of 0.5×10-4 mg/ml. Owing to Ni nano particles, the Ni contamination in poly-Ge film was reduced compared with the contamination in the poly-Ge film obtained using Ni-pattern MILC process. Therefore, nano particle induced MILC process is promising for realizing poly-Ge TFTs in next generation displays. This study was partially supported by AFOSR/AOARD.
Keywords :
crystal growth; elemental semiconductors; germanium; grain size; nanoparticles; semiconductor thin films; AFOSR/AOARD; Ge; MILC process; Ni ferritins; Ni nanoparticles; amorphous Ge thin films; grain size; low-temperature crystal growth; low-temperature crystallization; next generation displays; poly-Ge film; size 500 nm; Contamination; Crystallization; Films; Nickel; Proteins;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944872
