DocumentCode
2117234
Title
Characterization of transient drain current overshoot in poly-Si TFTs
Author
Ota, Toshifumi ; Kamakura, Yoshinari ; Taniguchi, Kenji
Author_Institution
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
fYear
2011
fDate
19-20 May 2011
Firstpage
118
Lastpage
119
Abstract
Characteristics of transient drain current overshoot in poly-Si TFTs are measured, and the physical mechanisms behind the observed results are discussed. By changing the terminals on which the step voltage is applied, two main mechanisms causing the transient current, i.e., the electron trapping effect and the self-heating effect, can be separately evaluated. Using this technique, the bias and geometrical dependence of the transient characteristics can be clearly understood.
Keywords
electron traps; thin film transistors; electron trapping effect; poly-Si TFT; self-heating effect; step voltage; thin film transistors; transient drain current overshoot; Charge carrier processes; Current measurement; Glass; Logic gates; Steady-state; Thin film transistors; Transient analysis; Electron Trapping; Overshoot Current; Poly-Si TFT; Self-Heating Effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-61284-145-8
Electronic_ISBN
978-1-61284-147-2
Type
conf
DOI
10.1109/IMFEDK.2011.5944873
Filename
5944873
Link To Document