Title :
Advantage of high-density plasma nitridation for improving thermal stability of ultrathin GeO2 on Ge(100)
Author :
Kasuya, A. ; Kutsuki, K. ; Hideshima, I. ; Hosoi, T. ; Shimura, T. ; Watanabe, H.
Author_Institution :
Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan
Abstract :
We have investigated the thermal stability of ultrathin germanium oxynitride (GeON) gate dielectrics fabricated by plasma nitridation of ultrathin thermal oxide (GeO2). Thermal treatment up to 520°C effectively improved the electrical properties of the ultrathin GeON dielectrics, such as reduced bulk and interface defects.
Keywords :
dielectric materials; dielectric thin films; germanium compounds; nitridation; plasma materials processing; thermal stability; GeO2-Ge; electrical property; gate dielectrics; high-density plasma nitridation; thermal stability; thermal treatment; ultrathin germanium oxynitride; ultrathin thermal oxide; Annealing; Capacitance-voltage characteristics; Dielectrics; Nitrogen; Plasma temperature; Temperature measurement; Thermal stability; MOS devices; Thermal stability; germanium; germanium oxynitride;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944875
