Title :
Analysis of hall effect in micro poly-Si Hall devices with p-type doping films for magnetic area sensors
Author :
Segawa, Tsuyoshi ; Yamaguchi, Yohei ; Hashimoto, Hayami ; Kimura, Mutsumi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
Hall effect in micro poly-Si Hall devices with p-type doping films is analyzed for magnetic area sensors. Normal Hall voltage (VH) occurs, and its change is proportional to the magnetic field (B). However, VH has an offset voltage (VO) even when B = 0, and VH continuously varies even when the polarities of B is reversed whereas the polarities of VH is reversed when the polarities of the control current (I) is reversed. VO originates from zigzag paths of I. The obtained results suggest the possibility of area sensors using micro poly-Si Hall devices.
Keywords :
Hall effect devices; elemental semiconductors; magnetic sensors; microsensors; semiconductor devices; semiconductor doping; semiconductor thin films; silicon; thin film sensors; Hall effect; Hall voltage; Si; magnetic area sensors; magnetic field; micro poly-Si Hall devices; p-type doping films; Films; Grain boundaries; Magnetic devices; Magnetic field measurement; Magnetic sensors; Silicon; Hall device; Hall effect; magnetic area sensor; p-type doping; poly-Si;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944880
