Title :
Modelling of SiC vertical power DMOSFET structure using the fundamental MOSFET´s set of equations
Author :
Lungu, Paul Daniel
Author_Institution :
Electron. & Telecommun., Politehnica Univ. of Bucharest, Romania
Abstract :
The most important parameters for 6H-SiC and 3C-SiC are extracted from the literature and implemented in an original vertical DMOSFET modeling program using the fundamental set of equations that account for the MOSFET characteristics. A comparison of current-voltage characteristics and specific on resistance for different values of breakdown voltage at two significant temperatures for 6H-SiC, 3C-SiC and Si is provided in this paper
Keywords :
electric breakdown; power MOSFET; semiconductor device models; semiconductor device reliability; semiconductor materials; silicon compounds; SiC; breakdown voltage; current-voltage characteristics; fundamental equation set; modeling program; specific on resistance; vertical power DMOSFET structure; Doping; Electrodes; Electrons; Equations; MOSFET circuits; Silicon carbide; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557383
