DocumentCode
2117571
Title
Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas
Author
Leyman, Ross ; Carnegie, David ; Bazieva, N. ; Molis, G. ; Arlauskas, A. ; Krotkus, A. ; Schulz, Stephan ; Reardon, Christopher ; Clarke, Edmund ; Rafailov, E.U.
Author_Institution
Photonics & Nanosci. Group, Univ. of Dundee, Dundee, UK
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
418
Lastpage
419
Abstract
This paper demonstrates the efficient generation of THz output signals using PC THz antennas based on semiconductor structures comprised of InAs quantum dots (QDs) embedded in high quality crystalline GaAs, whereby the embedded QDs act as the ultrafast capture mechanism.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photoconducting devices; semiconductor quantum dots; submillimetre wave antennas; terahertz wave generation; InAs:GaAs; quantum dot-based photoconductive THz antennas; semiconductor structures; terahertz antennas; terahertz output signal generation; Antennas; Gallium arsenide; Optical pumping; Signal detection; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656615
Filename
6656615
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