Title :
High-Q resonators on double-layer SOI platform
Author :
Moradinejad, Hesam ; Atabaki, Amir H. ; Hosseinia, Amir H. ; Eftekhar, Ali Asghar ; Adibi, Ali
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report microresonators with the highest Q on a double-layer SOI material platform developed using wafer bonding. We also demonstrate 2 μm radius resonators with Q´s>20k which are the most compact resonators on such platforms.
Keywords :
Q-factor; integrated optoelectronics; micro-optomechanical devices; micromechanical resonators; optical resonators; silicon-on-insulator; wafer bonding; Si; compact resonators; double-layer SOI platform; high-Q resonators; microresonators; wafer bonding; Optical device fabrication; Optical polarization; Optical resonators; Optical waveguides; Q-factor; Silicon;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656621
