A 3-10GHz Low-Noise Amplifier Using Resistive Feedback in SiGe HBT Technology

Author

Huang, Yi-Wen ; Zhang, Wan-Rong ; Xie, Hong-Yun ; Shen, Pei ; Li, Jia ; Gan, Jun-Ning ; Huang, Lu ; Hu, Ning

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

fYear

2009

fDate

27-28 Feb. 2009

Firstpage

313

Lastpage

315

Abstract

This paper presents a SiGe HBT low noise amplifier (LNA) using resistive feedback scheme for ultra-wideband (UWB) applications. This amplifier is implemented in 0.35 um SiGe process and is unconditionally stable. The simulated results show the LNA has over 21 dB gain with less than 1 dB variation over 3-10 GHz. The matched input and output reflection are all less than -10 dB. The noise figure is 4.03 dB at 3 GHz and increases to 4.85 dB at 10 GHz, which is good enough for the resistive feedback LNA.

Keywords

Ge-Si alloys; UHF amplifiers; feedback; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; semiconductor materials; ultra wideband communication; HBT technology; SiGe; frequency 3 GHz to 10 GHz; low noise amplifier; noise figure 4.03 dB to 4.85 dB; resistive feedback; size 0.35 mum; ultrawideband applications; Acoustic reflection; Feedback; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Low-noise amplifiers; Noise figure; Silicon germanium; Ultra wideband technology; LNA; SiGe HBT; UWB; resistive feedback;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Software and Networks, 2009. ICCSN '09. International Conference on

Conference_Location

Macau

Print_ISBN

978-0-7695-3522-7

Type

conf

DOI

10.1109/ICCSN.2009.157

Filename

5076863