Title :
Accuracy improvements in microwave transistor noise parameters extraction
Author :
Vasilescu, G ; Alquie, G.
Author_Institution :
Univ. Pierre et Marie Curie, Paris, France
Abstract :
This paper presents the influence of the choice of source admittances on the accuracy of noise parameters extraction, when using the noise parameter extraction method proposed by Vasilescu. The results obtained for three different microwave transistors are presented. The best and the worst distributions are put into evidence
Keywords :
Schottky gate field effect transistors; electric admittance; electric noise measurement; microwave measurement; microwave transistors; semiconductor device noise; MESFET; accuracy; microwave transistor noise parameter extraction; microwave transistors; noise parameter extraction method; noise parameters extraction; source admittance; Admittance; Data mining; Impedance measurement; Microwave devices; Microwave transistors; Noise figure; Noise measurement; Parameter extraction; Redundancy; Tuners;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651186
