Title :
Design and performance of a high frequency silicon carbide inverter
Author :
Shen, Miaosen ; Krishnamurthy, Shashank ; Mudholkar, Mihir
Author_Institution :
Power Electron. Group, United Technol. Res. Center, East Hartford, CT, USA
Abstract :
The advantages offered by wide band gap materials enable the design of converters with high power density for high performance applications. This paper presents the design and test results for a high frequency (400kHz) hard switched two level silicon carbide based three phase inverter. Using device and system parasitic models, the losses in the converter are predicted and validated using experimental tests. A calorimetric setup is utilized to accurately measure the performance of the inverter and efficiencies of 91% are obtained at a load of 4kVA and a switching frequency of 400kHz.
Keywords :
invertors; silicon compounds; wide band gap semiconductors; SiC; apparent power 4 kVA; efficiency 91 percent; frequency 400 kHz; high frequency hard switched two level silicon carbide; high frequency silicon carbide inverter; three phase inverter; wide band gap materials; Current measurement; Inverters; Power measurement; Silicon carbide; Switches; Switching frequency; Voltage measurement; high frequency; silicon carbide; three phase inverter;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2011 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4577-0542-7
DOI :
10.1109/ECCE.2011.6064038
