Title :
Optical properties of GaAs/GaAs1-xPx superlattices
Author_Institution :
State Univ. of Moldova
Abstract :
Time resolved photoluminescence of the GaAs/GaAs0.76P 0.24 superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electron minibands to holes are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band offset
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; photoluminescence; semiconductor superlattices; valence bands; 90 K; GaAs-GaAsP; SL model; conduction band offset; electron minibands; excitation levels; hole minibands; semiconductor superlattices; time resolved photoluminescence; valence-band offset; Charge carriers; Delay; Energy resolution; Energy states; Gallium arsenide; Laser excitation; Laser sintering; Optical superlattices; Photoluminescence; Space charge;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557385
