DocumentCode
2118144
Title
Advances in high power semiconductor lasers
Author
Knigge, S. ; Crump, P. ; Wenzel, Hans ; Erbert, Gotz ; Trankle, Gunther
Author_Institution
Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
466
Lastpage
467
Abstract
We review high power semiconductor laser development at the Ferdinand-Braun-Institut, focusing on studies to improve material quality, design development for peak performance in standard structures and the development of novel device concepts for new applications.
Keywords
optical materials; semiconductor lasers; design development; high power semiconductor laser; improve material quality; peak performance; Diode lasers; Laser applications; Laser modes; Materials; Performance evaluation; Power generation; Power lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656639
Filename
6656639
Link To Document