DocumentCode
2118266
Title
InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics
Author
Lee, Albert ; Mingchu Tang ; Qi Jiang ; Jiang Wu ; Seeds, A. ; Huiyun Liu
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
474
Lastpage
475
Abstract
We present the development of InAs/GaAs quantum-dot devices monolithically grown on Si substrates for silicon photonics. Room-temperature cw lasing at 1.3 μm has been demonstrated for the InAs/GaAs quantum-dot devices on Si substrates.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; quantum dot lasers; silicon; InAs-GaAs; Si; quantum-dot devices; quantum-dot lasers; room-temperature cw lasing; silicon photonics; silicon substrates; wavelength 1.3 mum; Gallium arsenide; Laser excitation; Photonics; Semiconductor lasers; Silicon; Substrates; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656643
Filename
6656643
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