Title :
Effect of strain on thresholdless Auger recombination in quantum wells
Author :
Andreev, Aleksey D. ; Zegrya, Georgy G.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Effect of strain on thresholdless Auger recombination processes in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of the particles has been carried out. It is shown that the strain both qualitatively and quantitatively affects the overlap integral between the electron and hole states. It is demonstrated that the Auger recombination rate decreases as compressive strain increases
Keywords :
Auger effect; deformation; electron-hole recombination; semiconductor quantum wells; compressive strain; overlap integrals; quantum wells; semiconductors; thresholdless Auger recombination; Capacitive sensors; Charge carrier processes; Electrons; Gold; Radiative recombination; Wave functions;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557387
