Simulation of microwave power characteristics of AlGaN/AlN/GaN HEMT

Author

Fu, Wenli ; Yan, Bo ; Xu, Yuehang ; Guo, Yunchuan

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2012

fDate

21-23 April 2012

Firstpage

564

Lastpage

566

Abstract

A systematic AlGaN/AlN/GaN HEMT physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The effects of source field plate on AlGaN/AlN/GaN HEMT breakdown voltage and DC drain current is also studied based on the established model. The off-state breakdown voltage was significantly improved by employing a source field plate. This is because the source field plate redistributes the electric fields in the gate-to-drain region.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; surface states; AlGaN-AlN-GaN; DC drain current; HEMT breakdown voltage; TCAD Silvaco; field-dependent mobility; gate-to-drain region; interface state; microwave power characteristics; off-state breakdown voltage; polarization effect; simulated DC characterization; simulated RF characterization; source field plate; surface state; systematic HEMT physical based numerical model; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Numerical models; Radio frequency; Silicon carbide; GaN; field plate; high electron mobility transistor; physical model;

fLanguage

English

Publisher

ieee

Conference_Titel

Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on

Conference_Location

Yichang

Print_ISBN

978-1-4577-1414-6

Type

conf

DOI

10.1109/CECNet.2012.6201697

Filename

6201697