Title :
Simulation of microwave power characteristics of AlGaN/AlN/GaN HEMT
Author :
Fu, Wenli ; Yan, Bo ; Xu, Yuehang ; Guo, Yunchuan
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China
Abstract :
A systematic AlGaN/AlN/GaN HEMT physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The effects of source field plate on AlGaN/AlN/GaN HEMT breakdown voltage and DC drain current is also studied based on the established model. The off-state breakdown voltage was significantly improved by employing a source field plate. This is because the source field plate redistributes the electric fields in the gate-to-drain region.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; surface states; AlGaN-AlN-GaN; DC drain current; HEMT breakdown voltage; TCAD Silvaco; field-dependent mobility; gate-to-drain region; interface state; microwave power characteristics; off-state breakdown voltage; polarization effect; simulated DC characterization; simulated RF characterization; source field plate; surface state; systematic HEMT physical based numerical model; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Numerical models; Radio frequency; Silicon carbide; GaN; field plate; high electron mobility transistor; physical model;
Conference_Titel :
Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on
Conference_Location :
Yichang
Print_ISBN :
978-1-4577-1414-6
DOI :
10.1109/CECNet.2012.6201697
