DocumentCode :
21190
Title :
Method to Simulate Rise Time of Current Drawn by a Microprocessor
Author :
Bhattacharyya, Bidyut K. ; Baral, Debasis
Author_Institution :
NIT Agartala, India & Torit, San Jose, CA, USA
Volume :
3
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
1731
Lastpage :
1736
Abstract :
We have developed a new method to simulate the effective rise time of current drawn by each cell in a microprocessor so that the total noise is consistent with values measured at the power and ground reference points inside the die. Normally, the measured values are much smaller than simulated values. In this paper, several exponential functions with varying time constants are staggered and combined at different starting time values to generate the effective current profile which was used for noise estimation. The model utilizes a realistic jitter-based distribution function compared to a step function used in existing models for the initial small amount of saturated current ramp. The practical model developed in this paper is useful for optimizing the cost and performance of microprocessors.
Keywords :
integrated circuit noise; jitter; microprocessor chips; power supply circuits; semiconductor device models; semiconductor device noise; current ramp; effective current rise time simulation; exponential functions; jitter-based distribution function; microprocessor; noise estimation; semiconductor device; step function; time constants; CMOS integrated circuits; Capacitance; Clocks; Current measurement; Logic gates; Noise; Power supplies; Average power drawn by CMOS device; current ramp generation; microprocessor currrent simulation; noise simulation; power delivery; power delivery network (PDN); rise time of current; stastical process for power delivery;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2013.2245945
Filename :
6502212
Link To Document :
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